Molecular beam epitaxy (MBE)
MBE is an ultra high vacuum technique for the epitaxial (layer by layer) deposition of thin films. It is naturally compatible with many surface science techniques like ARPES, STM/STS. We use this technique for the growth of very high purity transition metal dichalcogenides where the thickness of layers can be controlled with sub monolayer precision.

Spin-,angle-resolved photoemission spectroscopy (Spin-ARPES)
ARPES is also called "microscope of band structure". And Spin-ARPES is the only experimental tool that can directly probe the spin information of band structure of materials. We have developed novel Spin-ARPES system ultilizing spin-exchange interaction which allows us to perform experiments with high energy, momentum resolution, and data collection efficiency.