Education: Sep 2001 – Jun 2005, B.S. in Physics,Department of Physics, Wuhan University, Hubei, P. R. ChinaSep 2005 – Aug 2007, Ph.D. Candidate,State Key Laboratory for Surface Physics,Institute of Physics, Chinese Academy of Sciences, Beijing, P. R. ChinaSep 2007 – Jan 2011, Ph.D. in Physics,Department of Physics, Tsinghua University, Beijing, P. R. China

Employment: Feb 2011 – June 2015Postdoctoral Research Associate,Department of Physics, University of Wisconsin-Milwaukee, WI, USAJuly 2015 – PresentDistinguished Research Fellow,Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, P. R. China

Research Interests:

1. Scanning Tunneling Microscopy/ Spectroscopy

2. MBE Growth of Nanostructure

3. Quantum Topological Matter

长期致力于利用扫描隧道显微镜及分子束外延联合超高真空系统，在固体表面上进行低维纳米结构的原子级精度的可控生长及其电子结构的表征。近几年，在拓扑绝缘体薄膜，一维石墨烯纳米带，零维纳米颗粒等低维纳米结构研究方向中取得了一系列原创性的成果。在Advanced Materials、Nature Physics、Nature Communications、Physical Review Letters这些国际权威期刊发表高影响因子文章7篇。

1. Y. Y. Li, M. X. Chen, M. Weinert, and L. Li*, Direct Experimental Determination of Onset of Electron–Electron Interactions in Gap Opening of Zigzag Graphene Nanoribbons, Nature Communications 5, 4311 (2014).

2. Y. Liu, Y. Y. Li, S. Rajput, D. Gilks, L. Lari, P. L. Galindo, M. Weinert, V. K. Lazarov* and L. Li*, Tuning Dirac States by Strain in the Topological Insulator Bi₂Se₃, Nature Physics 10, 294 (2014). (Cover Article)

3. S. Rajput*, Y. Y. Li, and L. Li, Direct Experimental Evidence for the Reversal of Carrier Type upon Hydrogen Intercalation in Epitaxial Graphene-SiC(0001), Applied Physics Letters 104, 041908 (2014).

4. S. Rajput, M. X. Chen, Y. Liu, Y. Y. Li, M. Weinert, and L. Li*, Spatial Fluctuations in Barrier Height at the Graphene-Silicon Carbide Schottky Junction, Nature Communications 4, 2752 (2013).

5. Y. Liu, Y. Y. Li, D. Gilks, V. K. Lazarov, M. Weinert, and L. Li*, Charging Dirac States at Antiphase Domain Boundaries in the Three-Dimensional Topological Insulator Bi₂Se₃, Physical Review Letters 110, 186804 (2013). (Cover Article)

6. G. Wang, X. G. Zhu, Y. Y. Sun, Y. Y. Li, T. Zhang, J. Wen, X. Chen,  K. He, L. L. Wang, X. C. Ma, J. F. Jia, S. B. Zhang*, and Q. K. Xue*, Topological Insulator Thin Films of Bi₂Te₃ with Controlled Electronic Structure, Advanced Materials 23, 2929 (2011).

7. Y. Y. Li, G. Wang, X. G. Zhu, M. H. Liu, C. Ye, X. Chen, Y. Y. Wang, K. He, L. L. Wang, X. C. Ma, H. J. Zhang, X. Dai, Z. Fang, X. C. Xie, Y. Liu, X. L. Qi, J. F. Jia*, S. C. Zhang, and Q. K. Xue, Intrinsic Topological Insulator Bi₂Te₃ Thin Films on Si and Their Thickness Limit, Advanced Materials 22, 4002 (2010).

8. Y. Y. Li, M. Liu, D. Y. Ma, D. C. Yu, X. Chen, X. C. Ma, Q. K. Xue, K. W. Xu, J. F. Jia*, and F. Liu*, Bistability of Nanoscale Ag Islands on a Si(111)-(4×1)-In Surface Induced by Anisotropic Stress, Physical Review Letters 103, 076102 (2009).